IRFPG42 package illustration

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

IRFPG42

Availability on request

Manufacturer: Harris Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: TO-247

Description

N-Channel 1000 V 3.9A (Tc) 150W (Tc) Through Hole TO-247

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drain to Source Voltage (Vdss): 1000 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Mfr: Harris Corporation
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-247-3
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2.5A, 10V
Series: -
Supplier Device Package: TO-247
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA