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Product details

IRF647

Availability on request

Manufacturer: Harris Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 275 V 13A (Tc) 125W (Tc) Surface Mount D2PAK (TO-263)

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 275 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Mfr: Harris Corporation
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V
Series: -
Supplier Device Package: D2PAK (TO-263)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA