IPP028N08N3GHKSA1 product image

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Product details

IPP028N08N3GHKSA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO220-3-1

Description

N-Channel 80 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 80 V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-220-3
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Series: OptiMOS®
Supplier Device Package: PG-TO220-3-1
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.5V @ 270µA