STB30N65M2AG product image

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Product details

STB30N65M2AG

Availability on request

Manufacturer: STMicroelectronics
Category: Transistors - FETs, MOSFETs - Single
Package: D²PAK (TO-263)

Description

N-Channel 650 V 20A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

Datasheet View datasheet

Specifications

Base Product Number: STB30
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 30.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Mfr: STMicroelectronics
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Series: Automotive, AEC-Q101
Supplier Device Package: D²PAK (TO-263)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±25V
Vgs(th) (Max) @ Id: 4V @ 250µA