- Base Product Number
- PSMN0
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Drain to Source Voltage (Vdss)
- 55 V
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 226 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds
- 13000 pF @ 25 V
- Mfr
- NXP USA Inc.
- Mounting Type
- Through Hole
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Package
- Tube
- Package / Case
- TO-247-3
- Power Dissipation (Max)
- 300W (Tc)
- Rds On (Max) @ Id, Vgs
- 4.2mOhm @ 25A, 10V
- Series
- TrenchMOS™
- Supplier Device Package
- TO-247
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±15V
- Vgs(th) (Max) @ Id
- 2V @ 1mA