IRFR220,118 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

IRFR220,118

Availability on request

Manufacturer: NXP USA Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: DPAK

Description

N-Channel 200 V 4.8A (Tc) 42W (Tc) Surface Mount DPAK

Datasheet View datasheet

Specifications

Base Product Number: IRFR2
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Mfr: NXP USA Inc.
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Series: TrenchMOS™
Supplier Device Package: DPAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA