FQI17N08TU product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

FQI17N08TU

Availability on request

Manufacturer: Fairchild Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 80 V 16.5A (Tc) 3.13W (Ta), 65W (Tc) Through Hole I2PAK (TO-262)

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Drain to Source Voltage (Vdss): 80 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Mfr: Fairchild Semiconductor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max): 3.13W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 8.25A, 10V
Series: QFET®
Supplier Device Package: I2PAK (TO-262)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±25V
Vgs(th) (Max) @ Id: 4V @ 250µA