FQU1N50TU product image

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Product details

FQU1N50TU

Availability on request

Manufacturer: Fairchild Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 500 V 1.1A (Tc) 2.5W (Ta), 25W (Tc) Through Hole I-PAK

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Drain to Source Voltage (Vdss): 500 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Mfr: Fairchild Semiconductor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 550mA, 10V
Series: QFET®
Supplier Device Package: I-PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 250µA