IRFD123 product image

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Product details

IRFD123

Availability on request

Manufacturer: Harris Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: 4-HVMDIP

Description

N-Channel 100 V 1.3A (Ta) Through Hole 4-HVMDIP

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Drain to Source Voltage (Vdss): 100 V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Mfr: Harris Corporation
Mounting Type: Through Hole
Package: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 10V
Series: -
Supplier Device Package: 4-HVMDIP
Technology: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id: 4V @ 250µA