RFD14N05L product image

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Product details

RFD14N05L

Availability on request

Manufacturer: Harris Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: I-PAK

Description

N-Channel 50 V 14A (Tc) 48W (Tc) Through Hole I-PAK

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 50 V
Drive Voltage (Max Rds On, Min Rds On): 5V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Mfr: Harris Corporation
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 5V
Series: -
Supplier Device Package: I-PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2V @ 250µA