IRF630 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

IRF630

Availability on request

Manufacturer: Harris Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220AB

Description

N-Channel 200 V 9A (Tc) Through Hole TO-220AB

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 200 V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Mfr: Harris Corporation
Mounting Type: Through Hole
Package: Tube
Package / Case: TO-220-3
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Series: -
Supplier Device Package: TO-220AB
Technology: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id: 4V @ 250µA