FQPF17P06 product image

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Product details

FQPF17P06

Availability on request

Manufacturer: Fairchild Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220F-3

Description

P-Channel 60 V 12A (Tc) 39W (Tc) Through Hole TO-220F-3

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Mfr: Fairchild Semiconductor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-220-3 Full Pack
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 6A, 10V
Series: QFET®
Supplier Device Package: TO-220F-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±25V
Vgs(th) (Max) @ Id: 4V @ 250µA