FQB10N20LTM product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

FQB10N20LTM

Availability on request

Manufacturer: Fairchild Semiconductor
Category: Transistors - FETs, MOSFETs - Single
Package: D2PAK (TO-263)

Description

N-Channel 200 V 10A (Tc) 3.13W (Ta), 87W (Tc) Surface Mount D2PAK (TO-263)

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Mfr: Fairchild Semiconductor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 3.13W (Ta), 87W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Series: QFET®
Supplier Device Package: D2PAK (TO-263)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 250µA