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Product details

IRF230

Availability on request

Manufacturer: Harris Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: Bag

Description

N-Channel 200 V 9A (Tc) 75W (Tc) Through Hole TO-3

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 200 V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Mfr: Harris Corporation
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bag
Package / Case: TO-204AA, TO-3
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V
Series: -
Supplier Device Package: TO-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA