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Product details

IPN60R1K5PFD7SATMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 650 V 3.6A (Tc) 6W (Tc) Surface Mount PG-SOT223-3

Datasheet Not provided

Specifications

Base Product Number: IPN60R1
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-261-4, TO-261AA
Power Dissipation (Max): 6W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Series: CoolMOS™PFD7
Supplier Device Package: PG-SOT223-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4.5V @ 40µA