IPP60R022S7XKSA1 product image

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Product details

IPP60R022S7XKSA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: PG-TO220-3-1

Description

N-Channel 600 V 23A (Tc) 390W (Tc) Through Hole PG-TO220-3-1

Datasheet View datasheet

Specifications

Base Product Number: IPP60R022
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 12V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Series: CoolMOS™S7
Supplier Device Package: PG-TO220-3-1
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA