IRFD9113 product image

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Product details

IRFD9113

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: 4-HVMDIP

Description

P-Channel 60 V 600mA (Ta) Through Hole 4-HVMDIP

Datasheet Not provided

Specifications

Base Product Number: IRFD9113
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drain to Source Voltage (Vdss): 60 V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Mfr: Vishay Siliconix
Mounting Type: Through Hole
Operating Temperature: -
Package: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V
Series: -
Supplier Device Package: 4-HVMDIP
Technology: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id: -