FQPF19N10L product image

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Product details

FQPF19N10L

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: TO-220F-3

Description

N-Channel 100 V 13.6A (Tc) 38W (Tc) Through Hole TO-220F-3

Datasheet View datasheet

Specifications

Base Product Number: FQPF1
Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-220-3 Full Pack
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6.8A, 10V
Series: QFET®
Supplier Device Package: TO-220F-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 250µA