FQD10N20TM product image

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Product details

FQD10N20TM

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: TO-252AA

Description

N-Channel 200 V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Surface Mount TO-252AA

Datasheet View datasheet

Specifications

Base Product Number: FQD1
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Mfr: onsemi
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 2.5W (Ta), 51W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.8A, 10V
Series: QFET®
Supplier Device Package: TO-252AA
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 250µA