- Base Product Number
- FQPF3
- Current - Continuous Drain (Id) @ 25°C
- 2.2A (Tc)
- Drain to Source Voltage (Vdss)
- 200 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- FET Feature
- -
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 250 pF @ 25 V
- Mfr
- onsemi
- Mounting Type
- Through Hole
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Package
- Tube
- Package / Case
- TO-220-3 Full Pack
- Power Dissipation (Max)
- 32W (Tc)
- Rds On (Max) @ Id, Vgs
- 2.7Ohm @ 1.1A, 10V
- Series
- QFET®
- Supplier Device Package
- TO-220F-3
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±30V
- Vgs(th) (Max) @ Id
- 5V @ 250µA