- Base Product Number
- FQT5P10
- Current - Continuous Drain (Id) @ 25°C
- 1A (Tc)
- Drain to Source Voltage (Vdss)
- 100 V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- FET Feature
- -
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 8.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 250 pF @ 25 V
- Mfr
- onsemi
- Mounting Type
- Surface Mount
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Package
- Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
- Package / Case
- TO-261-4, TO-261AA
- Power Dissipation (Max)
- 2W (Tc)
- Rds On (Max) @ Id, Vgs
- 1.05Ohm @ 500mA, 10V
- Series
- QFET®
- Supplier Device Package
- SOT-223-4
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±30V
- Vgs(th) (Max) @ Id
- 4V @ 250µA