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PSMN1R7-40YLDX product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

PSMN1R7-40YLDX

Availability on request

Manufacturer
Nexperia USA Inc.
Category
Transistors - FETs, MOSFETs - Single
Package
LFPAK56, Power-SO8

Description

N-Channel 40 V 200A (Ta) 194W (Ta) Surface Mount LFPAK56, Power-SO8

Specifications
Base Product Number
PSMN1R7
Current - Continuous Drain (Id) @ 25°C
200A (Ta)
Drain to Source Voltage (Vdss)
40 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
FET Feature
Schottky Diode (Body)
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
7966 pF @ 20 V
Mfr
Nexperia USA Inc.
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Package
Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case
SC-100, SOT-669
Power Dissipation (Max)
194W (Ta)
Rds On (Max) @ Id, Vgs
1.8mOhm @ 25A, 10V
Series
TrenchMOS™
Supplier Device Package
LFPAK56, Power-SO8
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
2.05V @ 1mA