DMT6017LFDF-7 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

DMT6017LFDF-7

Availability on request

Manufacturer: Diodes Incorporated
Category: Transistors - FETs, MOSFETs - Single
Package: U-DFN2020-6 (Type F)

Description

N-Channel 65 V 8.1A (Ta) 800mW (Ta) Surface Mount U-DFN2020-6 (Type F)

Datasheet View datasheet

Specifications

Base Product Number: DMT6017
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Drain to Source Voltage (Vdss): 65 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
Mfr: Diodes Incorporated
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Series: -
Supplier Device Package: U-DFN2020-6 (Type F)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±16V
Vgs(th) (Max) @ Id: 2.3V @ 250µA