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Product details

SCT30N120D2

Availability on request

Manufacturer: STMicroelectronics
Category: Transistors - FETs, MOSFETs - Single
Package: HiP247™

Description

N-Channel 1200 V 40A (Tc) 270W (Tc) Through Hole HiP247™

Datasheet Not provided

Specifications

Base Product Number: SCT30
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 20V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
Mfr: STMicroelectronics
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Package: Tray
Package / Case: TO-247-3
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Series: -
Supplier Device Package: HiP247™
Technology: SiCFET (Silicon Carbide)
Vgs (Max): +25V, -10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA