- Base Product Number
- SSM3K131
- Current - Continuous Drain (Id) @ 25°C
- 6A (Ta)
- Drain to Source Voltage (Vdss)
- 30 V
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 10.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds
- 450 pF @ 15 V
- Mfr
- Toshiba Semiconductor and Storage
- Mounting Type
- Surface Mount
- Operating Temperature
- 150°C
- Package
- Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
- Package / Case
- 3-SMD, Flat Leads
- Power Dissipation (Max)
- 500mW (Ta)
- Rds On (Max) @ Id, Vgs
- 27.6mOhm @ 4A, 10V
- Series
- U-MOSVI
- Supplier Device Package
- UFM
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±20V
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA