- Base Product Number
- SSM3K122
- Current - Continuous Drain (Id) @ 25°C
- 2A (Ta)
- Drain to Source Voltage (Vdss)
- 20 V
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5V, 4V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 3.4 nC @ 4 V
- Input Capacitance (Ciss) (Max) @ Vds
- 195 pF @ 10 V
- Mfr
- Toshiba Semiconductor and Storage
- Mounting Type
- Surface Mount
- Operating Temperature
- 150°C
- Package
- Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
- Package / Case
- 3-SMD, Flat Leads
- Power Dissipation (Max)
- 500mW (Ta)
- Rds On (Max) @ Id, Vgs
- 123mOhm @ 1A, 4V
- Series
- -
- Supplier Device Package
- UFM
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±10V
- Vgs(th) (Max) @ Id
- 1V @ 1mA