ULN2803APG,CN product image

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Product details

ULN2803APG,CN

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - Bipolar (BJT) - Arrays
Package: Tube

Description

Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 1.47W Through Hole 18-DIP

Datasheet Not provided

Specifications

Base Product Number: ULN2803
Current - Collector (Ic) (Max): 500mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Frequency - Transition: -
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Package: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Power - Max: 1.47W
Series: -
Supplier Device Package: 18-DIP
Transistor Type: 8 NPN Darlington
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Voltage - Collector Emitter Breakdown (Max): 50V