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2N2060M product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2N2060M

Availability on request

Manufacturer
Central Semiconductor Corp
Category
Transistors - Bipolar (BJT) - Arrays
Package
TO-78-6

Description

Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 500mA 60MHz 3W Through Hole TO-78-6

Datasheet View datasheet (opens in a new window)
Specifications
Current - Collector (Ic) (Max)
500mA
Current - Collector Cutoff (Max)
2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Frequency - Transition
60MHz
Mfr
Central Semiconductor Corp
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-78-6 Metal Can
Power - Max
3W
Series
-
Supplier Device Package
TO-78-6
Transistor Type
2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic
1.2V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
60V

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