JAN2N4854 product image

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Product details

JAN2N4854

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - Bipolar (BJT) - Arrays
Package: TO-78-6

Description

Bipolar (BJT) Transistor Array NPN, PNP 40V 600mA 600mW Through Hole TO-78-6

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 600mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: -
Mfr: Microchip Technology
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Package: Bulk
Package / Case: TO-78-6 Metal Can
Power - Max: 600mW
Series: Military, MIL-PRF-19500/421
Supplier Device Package: TO-78-6
Transistor Type: NPN, PNP
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max): 40V