JAN2N5795A product image

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Product details

JAN2N5795A

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - Bipolar (BJT) - Arrays
Package: TO-78-6

Description

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA 600mW Through Hole TO-78-6

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 600mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: -
Mfr: Microchip Technology
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-78-6 Metal Can
Power - Max: 600mW
Series: Military, MIL-PRF-19500/496
Supplier Device Package: TO-78-6
Transistor Type: 2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 60V