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Product details

PDTC114ET/DG/B2,21

Availability on request

Manufacturer: Nexperia USA Inc.
Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Reel (TR)

Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 MHz 250 mW Surface Mount TO-236AB

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 100 mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 230 MHz
Mfr: Nexperia USA Inc.
Mounting Type: Surface Mount
Package: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Power - Max: 250 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Series: Automotive, AEC-Q101
Supplier Device Package: TO-236AB
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50 V