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Product details

2SD1697-AZ

Availability on request

Manufacturer: Renesas Electronics America Inc
Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Bulk

Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 80 V 800 mA 1 W Through Hole

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 800 mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 300mA, 2V
Mfr: Renesas Electronics America Inc
Mounting Type: Through Hole
Package: Bulk
Package / Case: 3-SSIP
Power - Max: 1 W
Resistor - Base (R1): 1 kOhms
Series: -
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 1mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 80 V