HN1B01FU-Y(L,F,T) product image

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Product details

HN1B01FU-Y(L,F,T)

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - Bipolar (BJT) - Arrays
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 120MHz 200mW Surface Mount US6

Datasheet Not provided

Specifications

Base Product Number: HN1B01
Current - Collector (Ic) (Max): 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 120MHz
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 6-TSSOP, SC-88, SOT-363
Power - Max: 200mW
Series: -
Supplier Device Package: US6
Transistor Type: NPN, PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V