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Product details

2N3811

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - Bipolar (BJT) - Arrays
Package: Bulk

Description

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Frequency - Transition: -
Mfr: Microsemi Corporation
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Package: Bulk
Package / Case: TO-78-6 Metal Can
Power - Max: 350mW
Series: -
Supplier Device Package: TO-78-6
Transistor Type: 2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V