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Product details

JAN2N6989

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Arrays
Package
TO-116

Description

Bipolar (BJT) Transistor Array 4 NPN (Quad) 50V 800mA 1.5W Through Hole TO-116

Datasheet Not provided
Specifications
Base Product Number
2N6989
Current - Collector (Ic) (Max)
800mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
14-DIP (0.300", 7.62mm)
Power - Max
1.5W
Series
Military, MIL-PRF-19500/559
Supplier Device Package
TO-116
Transistor Type
4 NPN (Quad)
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
50V