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Product details

JANTX2N2920A

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Arrays
Package
TO-78-6

Description

Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Through Hole TO-78-6

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
30mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 1mA, 5V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-78-6 Metal Can
Power - Max
350mW
Series
Military, MIL-PRF-19500/355
Supplier Device Package
TO-78-6
Transistor Type
2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic
300mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max)
60V

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