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Product details

FA4L4L-T1B-A

Availability on request

Manufacturer: Renesas
Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Bulk

Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-59

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 100 mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V
Mfr: Renesas
Mounting Type: Surface Mount
Package: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Power - Max: 200 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Series: -
Supplier Device Package: SC-59
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50 V