Renesas Electronics America Inc
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Product details
MMBTRA226S
Availability on request
Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 800 mA 200 MHz 200 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
Not provided
Specifications
- Current - Collector (Ic) (Max)
- 800 mA
- Current - Collector Cutoff (Max)
- 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 56 @ 50mA, 5V
- Frequency - Transition
- 200 MHz
- Mfr
- Diotec Semiconductor
- Mounting Type
- Surface Mount
- Package
- Tape & Reel (TR)
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Power - Max
- 200 mW
- Resistor - Base (R1)
- 2.2 kOhms
- Resistor - Emitter Base (R2)
- 10 kOhms
- Series
- -
- Supplier Device Package
- SOT-23-3 (TO-236)
- Transistor Type
- PNP - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic
- -