Renesas Electronics America Inc
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Product details
FJN4303RBU
Availability on request
Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole TO-92-3
Datasheet
Not provided
Specifications
- Current - Collector (Ic) (Max)
- 100 mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 56 @ 5mA, 5V
- Frequency - Transition
- 200 MHz
- Mfr
- Fairchild Semiconductor
- Mounting Type
- Through Hole
- Package
- Bulk
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Power - Max
- 300 mW
- Resistor - Base (R1)
- 22 kOhms
- Resistor - Emitter Base (R2)
- 22 kOhms
- Series
- -
- Supplier Device Package
- TO-92-3
- Transistor Type
- PNP - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 10mA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V