Renesas Electronics America Inc
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Product details
FJNS3209RTA
Availability on request
Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 100 mA 250 MHz 300 mW Through Hole TO-92S
Datasheet
Not provided
Specifications
- Base Product Number
- FJNS32
- Current - Collector (Ic) (Max)
- 100 mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 1mA, 5V
- Frequency - Transition
- 250 MHz
- Mfr
- onsemi
- Mounting Type
- Through Hole
- Package
- Tape & Box (TB)
- Package / Case
- TO-226-3, TO-92-3 Short Body
- Power - Max
- 300 mW
- Resistor - Base (R1)
- 4.7 kOhms
- Series
- -
- Supplier Device Package
- TO-92S
- Transistor Type
- NPN - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 1mA, 10mA
- Voltage - Collector Emitter Breakdown (Max)
- 40 V