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Product details

RJP65T54DPM-E0#T2

Availability on request

Manufacturer: Renesas Electronics America Inc
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT Trench 650 V 60 A 63.5 W Through Hole TO-3PF

Datasheet Not provided

Specifications

Base Product Number: RJP65T54
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 225 A
Gate Charge: 72 nC
IGBT Type: Trench
Input Type: Standard
Mfr: Renesas Electronics America Inc
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Package: Tube
Package / Case: TO-3PFM, SC-93-3
Power - Max: 63.5 W
Series: -
Supplier Device Package: TO-3PF
Switching Energy: 330µJ (on), 760µJ (off)
Td (on/off) @ 25°C: 35ns/120ns
Test Condition: 400V, 30A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max): 650 V