HAT2210RWS-E product image

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Product details

HAT2210RWS-E

Availability on request

Manufacturer: Renesas Electronics America Inc
Category: Transistors - FETs, MOSFETs - Arrays
Package: Tape & Reel (TR)

Description

Mosfet Array 2 N-Channel (Dual), Schottky 30V 7.5A (Ta), 8A (Ta) 1.5W (Ta) Surface Mount 8-SOP

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate, 4.5V Drive
FET Type: 2 N-Channel (Dual), Schottky
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V, 1330pF @ 10V
Mfr: Renesas Electronics America Inc
Mounting Type: Surface Mount
Operating Temperature: 150°C
Package: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power - Max: 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V
Series: -
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA