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2SA11230RA product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2SA11230RA

Availability on request

Manufacturer
Panasonic Electronic Components
Category
Transistors - Bipolar (BJT) - Single
Package
TO-92-B1

Description

Bipolar (BJT) Transistor PNP 150 V 50 mA 200MHz 750 mW Through Hole TO-92-B1

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
2SA1123
Current - Collector (Ic) (Max)
50 mA
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
130 @ 10mA, 5V
Frequency - Transition
200MHz
Mfr
Panasonic Electronic Components
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Cut Tape (CT), Tape & Box (TB)
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max
750 mW
Series
-
Supplier Device Package
TO-92-B1
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
1V @ 3mA, 30mA
Voltage - Collector Emitter Breakdown (Max)
150 V

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