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MJE344G product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

MJE344G

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
TO-126

Description

Bipolar (BJT) Transistor NPN 200 V 500 mA 15MHz 20 W Through Hole TO-126

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
MJE344
Current - Collector (Ic) (Max)
500 mA
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA, 10V
Frequency - Transition
15MHz
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Package
Bulk
Package / Case
TO-225AA, TO-126-3
Power - Max
20 W
Series
-
Supplier Device Package
TO-126
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
200 V

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