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MJD45H11-1G product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

MJD45H11-1G

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
I-PAK

Description

Bipolar (BJT) Transistor PNP 80 V 8 A 90MHz 1.75 W Through Hole I-PAK

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
MJD45
Current - Collector (Ic) (Max)
8 A
Current - Collector Cutoff (Max)
1µA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 4A, 1V
Frequency - Transition
90MHz
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Power - Max
1.75 W
Series
-
Supplier Device Package
I-PAK
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Voltage - Collector Emitter Breakdown (Max)
80 V

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