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MJ11016G product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

MJ11016G

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
TO-204 (TO-3)

Description

Bipolar (BJT) Transistor NPN - Darlington 120 V 30 A 4MHz 200 W Through Hole TO-204 (TO-3)

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
MJ11016
Current - Collector (Ic) (Max)
30 A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 20A, 5V
Frequency - Transition
4MHz
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Package
Tray
Package / Case
TO-204AA, TO-3
Power - Max
200 W
Series
-
Supplier Device Package
TO-204 (TO-3)
Transistor Type
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic
4V @ 300mA, 30A
Voltage - Collector Emitter Breakdown (Max)
120 V

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