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2SA1943-O(Q) product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2SA1943-O(Q)

Availability on request

Manufacturer
Toshiba Semiconductor and Storage
Category
Transistors - Bipolar (BJT) - Single
Package
TO-3P(L)

Description

Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
2SA1943
Current - Collector (Ic) (Max)
15 A
Current - Collector Cutoff (Max)
5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A, 5V
Frequency - Transition
30MHz
Mfr
Toshiba Semiconductor and Storage
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Tube
Package / Case
TO-3PL
Power - Max
150 W
Series
-
Supplier Device Package
TO-3P(L)
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Voltage - Collector Emitter Breakdown (Max)
230 V

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