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Product details

500-00001

Availability on request

Manufacturer
Parallax Inc.
Category
Transistors - Bipolar (BJT) - Single
Package
TO-92 (TO-226)

Description

Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 1.5 W Through Hole TO-92 (TO-226)

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
200 mA
Current - Collector Cutoff (Max)
50nA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V
Frequency - Transition
300MHz
Mfr
Parallax Inc.
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Bulk
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max
1.5 W
Series
-
Supplier Device Package
TO-92 (TO-226)
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
40 V

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