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Product details

JAN2N7369

Availability on request

Manufacturer
Microsemi Corporation
Category
Transistors - Bipolar (BJT) - Single
Package
TO-254AA

Description

Bipolar (BJT) Transistor PNP 80 V 10 A 115 W Through Hole TO-254AA

Datasheet Not provided
Specifications
Base Product Number
2N7369
Current - Collector (Ic) (Max)
10 A
Current - Collector Cutoff (Max)
5mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 1A, 2V
Frequency - Transition
-
Mfr
Microsemi Corporation
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-254-3, TO-254AA
Power - Max
115 W
Series
MIL-PRF-19500/621
Supplier Device Package
TO-254AA
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
1V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
80 V