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Product details

JAN2N5339U3

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
U-3 (TO-276AA)

Description

Bipolar (BJT) Transistor NPN 100 V 100 µA 1 W Surface Mount U-3 (TO-276AA)

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
100 µA
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 2A, 2V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-276AA
Power - Max
1 W
Series
Military, MIL-PRF-19500/560
Supplier Device Package
U-3 (TO-276AA)
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1.2V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
100 V

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